ZXMN20B28KTC Diodes Inc, ZXMN20B28KTC Datasheet - Page 3

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 200V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN20B28KTC

• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 750 mOhms
• Forward Transconductance Gfs (max / Min): 6.13 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 4.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
100m
10m
100
1m
60
50
40
30
20
10
10
10
100µ
100µ
1
0
1
Transient Thermal Impedance
1
25mm x 25mm
D=0.5
D=0.2
R
Limited
25mm x 25mm
DS(on)
T
Pulse Power Dissipation
1oz FR4
T
1m
1m
V
amb
Safe Operating Area
1oz FR4
DC
amb
DS
=25°C
=25°C
Drain-Source Voltage (V)
10m 100m
10m 100m
1s
Pulse Width (s)
Pulse Width (s)
100ms
25mm x 25mm
10
1oz FR4
10ms
1
1
1ms
50mm x 50mm
100µs
Single Pulse
10
10
Single Pulse
2oz FR4
T
D=0.05
amb
100
=25°C
D=0.1
100
100
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1k
1k
3 of 8
100m
10m
1m
10
35
30
25
20
15
10
100µ
1
5
0
4
3
2
1
0
Transient Thermal Impedance
1
0
D=0.5
D=0.2
50mm x 50mm
R
Limited
50mm x 50mm
DS(on)
T
20
Safe Operating Area
2oz FR4
T
1m
DC
amb
V
2oz FR4
amb
DS
=25°C
=25°C
1s
40
Temperature (°C)
Drain-Source Voltage (V)
10m 100m
Derating Curve
Pulse Width (s)
100ms
60
Diodes Incorporated
10
A Product Line of
80
10ms
50mm x 50mm
100 120 140 160
1ms
1
2oz FR4
25mm x 25mm
Single Pulse
100µs
1oz FR4
10
D=0.05
100
D=0.1
100
ZXMN20B28K
1k
© Diodes Incorporated
October 2009