IRF9640STRLPBF Vishay, IRF9640STRLPBF Datasheet - Page 3
![MOSFET Power P-Chan 200V 11 Amp](/photos/16/8/160870/to252_sml.jpg)
IRF9640STRLPBF
Manufacturer Part Number
IRF9640STRLPBF
Description
MOSFET Power P-Chan 200V 11 Amp
Manufacturer
Vishay
Datasheet
1.IRF9640STRLPBF.pdf
(8 pages)
Specifications of IRF9640STRLPBF
Transistor Polarity
P-Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Voltage Vgs Max
-20V
Operating Temperature
RoHS Compliant
Leaded Process Compatible
Yes
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Fall Time
38 ns
Rise Time
43 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9640STRLPBF
Manufacturer:
IR
Quantity:
15 000
Company:
Part Number:
IRF9640STRLPBF
Manufacturer:
VISHAY
Quantity:
800
Part Number:
IRF9640STRLPBF
Manufacturer:
IR
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91087
S10-1728-Rev. C, 02-Aug-10
91087_01
91087_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
Top
Bottom
0
Top
Bottom
0
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS ,
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
150 °C
25 °C
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
C
- 4.5 V
C
- 4.5 V
= 150 °C
= 25 °C
91087_03
91087_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 11 A
= - 10 V
- V
25
5
T
GS ,
J ,
°
C
Junction Temperature (°C)
Gate-to-Source Voltage (V)
6
20 40 60 80 100 120 140 160
150
7
°
Vishay Siliconix
C
20 µs Pulse Width
V
DS
8
= -
50 V
www.vishay.com
9
10
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