IRF9640STRLPBF Vishay, IRF9640STRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9640STRLPBF
• Description: MOSFET Power P-Chan 200V 11 Amp
• Manufacturer: Vishay

Specifications of IRF9640STRLPBF

• Transistor Polarity: P-Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Voltage Vgs Max: -20V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Fall Time: 38 ns
• Rise Time: 43 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
www.vishay.com
6
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91087_12c
1600
1200
800
400
0
25
V
DD
Starting T
= - 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
Fig. 13b - Gate Charge Test Circuit
V
- 4.9 A
- 7.0 A
- 11 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S10-1728-Rev. C, 02-Aug-10
Document Number: 91087
D.U.T.
I
D
+
-
V
DS