SUP75P03-07-E3 Vishay, SUP75P03-07-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP75P03-07-E3
• Description: MOSFET Power 30V 75A 187W
• Manufacturer: Vishay

Specifications of SUP75P03-07-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
12 000
10 000
8000
6000
4000
2000
250
200
150
100
50
150
120
0
90
60
30
0
0
0
0
0
C
rss
2
V
20
6
V
DS
DS
Output Characteristics
V
C
- Drain-to-Source Voltage (V)
GS
- Drain-to-Source Voltage (V)
oss
Transconductance
I
= 10 V thru 6 V
D
Capacitance
- Drain Current (A)
4
12
40
6
18
60
C
iss
T
8
24
C
80
= - 55 °C
125 °C
25 °C
5 V
4 V
3 V
10
100
30
SUB75P03-07, SUP75P03-07
0.030
0.025
0.020
0.015
0.010
0.005
20
16
12
200
160
120
0
8
4
0
80
40
0
0
0
0
V
I
D
DS
= 75 A
20
On-Resistance vs. Drain Current
50
= 15 V
1
V
Transfer Characteristics
GS
Q
g
100
- Gate-to-Source Voltage (V)
40
I
- Total Gate Charge (nC)
D
V
2
- Drain Current (A)
Gate Charge
GS
= 4.5 V
150
60
Vishay Siliconix
3
T
25 °C
C
200
80
= - 55 °C
4
www.vishay.com
V
GS
100
= 10 V
250
5
125 °C
120
300
6
3