SUP75P03-08 Vishay Intertechnology, SUP75P03-08 Datasheet

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SUP75P03-08

Manufacturer Part Number

SUP75P03-08

Description

P-channel Enhancement-mode Transistors

Manufacturer

Vishay Intertechnology

Datasheet

1.SUP75P03-08.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SUP75P03-08

Manufacturer:

VISHAY

Quantity:

12 500

Current page: 1 of 4
Download datasheet (48Kb)

Notes:

a.

b.

c.

d.

Document Number: 70772

S-05111—Rev. D, 10-Dec-99

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current

(T

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation

Operating Junction and Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

J

Package limited.

Duty cycle v 1%.

When mounted on 1” square PCB (FR-4 material).

See SOA curve for voltage derating.

= 175_C)

V

(BR)DSS

–30

TO-220AB

SUP75P03-08

Top View

G D S

(V)

b

DRAIN connected to TAB

r

P-Channel 30-V (D-S), 175_C MOSFET

DS(on)

Parameter

0.008

Parameter

(W)

T

C

PCB Mount (TO-263)

= 25_C (TO-220AB and TO-263)

Free Air (TO-220AB)

T

A

= 25_C (TO-263)

T

I

L = 0.1 mH

T

D

–75

C

C

(A)

= 125_C

= 25_C

a

_

SUB75P03-08

c

Top View

TO-263

G

c

D

S

Symbol

R

R

R

thJA

thJA

thJC

Symbol

T

J

V

E

I

I

P

, T

DM

I

AR

GS

AR

D

D

stg

SUP/SUB75P03-08

Limit

62.5

0.6

40

P-Channel MOSFET

–55 to 175

Vishay Siliconix

G

Limit

–200

"20

–75

250

–65

–75

280

3.7

a

d

S

D

www.vishay.com

Unit

_C/W

Unit

mJ

_C

W

V

A

1

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