ZVP2120GTA Diodes Inc, ZVP2120GTA Datasheet - Page 2

• Manufacturer Part Number: ZVP2120GTA
• Description: MOSFET Power P-Chnl 200V
• Manufacturer: Diodes Inc

Specifications of ZVP2120GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
-0.6
-0.4
-0.2
-20
-18
-14
50
10
-16
-12
-10
0
-8
-6
-4
-2
0
On-resistance vs gate-source voltage
-1
0
Voltage Saturation Characteristics
0
V
V
V
GS-
GS
DS
-20
Output Characteristics
-2
-Gate Source Voltage (Volts)
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
V
-10V
-8V
-7V
GS=
-40
-4
TYPICAL CHARACTERISTICS
-6V
-60
-6
-10
-80
-8
-100
-10
-20
-5V
-4.5V
-4V
-3.5V
-200mA
-100mA
I
-300mA
I
-
-200mA
-I00mA
-50mA
D=
300mA
D=
-50mA
Normalised R
-0.6
-0.4
-0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
-0.4
-0.3
-0.2
-0.1
0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
-2
DS(on)
-2
GS-
0 20 40 60 80
T-Temperature (°C)
Gate Source Voltage (Volts)
and V
-4
-4
GS(th)
-6
-6
100
vs Temperature
120
-8
-8
140 160
V
V
I
GS=
I
D=
GS=
D=-
-1mA
-10V
0.1A
V
DS
-10
180
-10
-10V
V
-25V
-3.5V
DS=
-10V
V
-7V
-6V
-5V
-8V
-4.5V
-4V
GS
=