ZVP2120GTA Diodes Inc, ZVP2120GTA Datasheet - Page 3

• Manufacturer Part Number: ZVP2120GTA
• Description: MOSFET Power P-Chnl 200V
• Manufacturer: Diodes Inc

Specifications of ZVP2120GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

180
200
160
140
120
100
80
60
40
20
0
40
100
80
60
20
Capacitance v drain-source voltage
0
Transconductance v drain current
0
V
I
D
DS
- Drain Current (Amps)
-10
-0.2
-Drain Source Voltage (Volts)
-20
TYPICAL CHARACTERISTICS
-0.4
-30
V
DS=
-25V
-0.6
-40
C
C
iss
oss
-0.8
-50
C
rss
Transconductance v gate-source voltage
-10
-12
-14
-16
-2
-4
-6
-8
200
180
160
140
120
100
0
80
60
40
20
Gate charge v gate-source voltage
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2
V
V
-2
GS
DS
-50V
=
-Gate Source Voltage (Volts)
-100V -180V
Q-Charge (nC)
-4
V
DS=
1.4 1.6 1.8 2.0 2.2 2.4
-25V
-6
-8
I
D=-
0.4A
-10