ZXMN4A06GTA Diodes Inc, ZXMN4A06GTA Datasheet - Page 3

• Manufacturer Part Number: ZXMN4A06GTA
• Description: MOSFET Power 40V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN4A06GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 1 - MAY 2002
100m
10m
70
60
50
40
30
20
10
10
100µ 1m 10m 100m 1
0
1
Transient Thermal Impedance
R
Limited
Single Pulse
T
V
T
D= 0.5
D= 0.2
DS(on)
amb
amb
DS
DC
= 25° C
Safe Operating Area
= 25° C
Drain-Source Voltage (V)
1s
Pulse Width (s)
1
100ms
10ms
1ms
D= 0.1
D= 0.05
10
100µs
10
Single Pulse
CHARACTERISTICS
100
1k
3
100
2.0
1.6
1.2
0.8
0.4
0.0
10
100µ 1m 10m 100m 1
1
0
20
Pulse Power Dissipation
Temperature (° C)
Derating Curve
40
Pulse Width (s)
60
ZXMN4A06G
80 100 120 140 160
Single Pulse
T
10
amb
= 25° C
100
1k