ZXMN4A06GTA Diodes Inc, ZXMN4A06GTA Datasheet - Page 5

• Manufacturer Part Number: ZXMN4A06GTA
• Description: MOSFET Power 40V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN4A06GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 1 - MAY 2002
Typical Transfer Characteristics
0.1
0.1
10
10
10
1
1
1
On-Resistance v Drain Current
1
V
V
T = 25° C
0.1
DS
GS
T = 150° C
I
Output Characteristics
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
2V
Drain Current (A)
2
1
V
10V
GS
1
4V
T = 25° C
2.5V
1.5V
V
3
TYPICAL CHARACTERISTICS
DS
10
T = 25° C
= 10V
10
3V
2.5V
3.5V
3V
4V
2V
3.5V
V
10V
GS
4
5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
10
1
-50
0.2
1
Tj Junction Temperature (° C)
V
V
T = 150° C
0.1
DS
SD
0.4
Output Characteristics
Drain-Source Voltage (V)
Source-Drain Voltage (V)
T = 150° C
0
0.6
V
I
D
GS
= 250uA
10V
1
V
I
0.8
= V
D
ZXMN4A06G
50
GS
= 4.5A
= 10V
DS
T = 25° C
1.0
100
10
4V
1.2
R
V
3.5V
3V
2.5V
DS(on)
2V
1.5V
GS(th)
V
GS
150
1.4