ZXMN4A06GTA Diodes Inc, ZXMN4A06GTA Datasheet - Page 5
![MOSFET Power 40V N-Chnl UMOS](/photos/16/6/160693/sot223-4_sml.jpg)
ZXMN4A06GTA
Manufacturer Part Number
ZXMN4A06GTA
Description
MOSFET Power 40V N-Chnl UMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXMN4A06GTA.pdf
(7 pages)
Specifications of ZXMN4A06GTA
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
3900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ISSUE 1 - MAY 2002
Typical Transfer Characteristics
0.1
0.1
10
10
10
1
1
1
On-Resistance v Drain Current
1
V
V
T = 25° C
0.1
DS
GS
T = 150° C
I
Output Characteristics
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
2V
Drain Current (A)
2
1
V
10V
GS
1
4V
T = 25° C
2.5V
1.5V
V
3
TYPICAL CHARACTERISTICS
DS
10
T = 25° C
= 10V
10
3V
2.5V
3.5V
3V
4V
2V
3.5V
V
10V
GS
4
5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
10
1
-50
0.2
1
Tj Junction Temperature (° C)
V
V
T = 150° C
0.1
DS
SD
0.4
Output Characteristics
Drain-Source Voltage (V)
Source-Drain Voltage (V)
T = 150° C
0
0.6
V
I
D
GS
= 250uA
10V
1
V
I
0.8
= V
D
ZXMN4A06G
50
GS
= 4.5A
= 10V
DS
T = 25° C
1.0
100
10
4V
1.2
R
V
3.5V
3V
2.5V
DS(on)
2V
1.5V
GS(th)
V
GS
150
1.4