IPD105N03L G Infineon Technologies, IPD105N03L G Datasheet - Page 5

• Manufacturer Part Number: IPD105N03L G
• Description: MOSFET Power N-CH 30 V 35 A
• Manufacturer: Infineon Technologies

Specifications of IPD105N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 35 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO-252-3-11
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD105N03LGXT

Rev. 1.02
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
100
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
10 V
|>2|I
1
D
5 V
|R
1
DS(on)max
2
175 °C
V
V
4.5 V
GS
DS
[V]
[V]
3
25 °C
4 V
2
4
2.8 V
3.5 V
3.2 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
30
25
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
3.2 V
D
j
); T
=25 °C
GS
3.5 V
j
=25 °C
IPS105N03L G
IPD105N03L G
20
20
40
40
I
I
D
D
[A]
[A]
4 V
60
60
IPU105N03L G
IPF105N03L G
11.5 V
80
10 V
80
4.5 V
5 V
2008-04-15
100
100