SUD50N03-12P-E3 Vishay, SUD50N03-12P-E3 Datasheet - Page 4
![MOSFET Power 30V 17.5A 46.8W](/photos/16/8/160864/to-252_sml.jpg)
SUD50N03-12P-E3
Manufacturer Part Number
SUD50N03-12P-E3
Description
MOSFET Power 30V 17.5A 46.8W
Manufacturer
Vishay
Datasheet
1.SUD50N03-12P-E3.pdf
(5 pages)
Specifications of SUD50N03-12P-E3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17.5 A
Power Dissipation
6500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
17.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
SUD50N03-12P
Vishay Siliconix
www.vishay.com
4
THERMAL RATINGS
20
16
12
8
4
0
0.01
0.01
0
0.1
0.1
2
1
2
1
10
10
25
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Maximum Drain Current vs.
Single Pulse
T
A
0.05
Ambiemt Temperature
50
- Ambient Temperature (_C)
0.02
10
10
75
-3
-3
100
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
-2
150
10
-2
New Product
175
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-1
10
-1
1000
0.01
100
1
0.1
10
1
0.1
by r
Limited
DS(on)
1
V
DS
10
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
A
1
= 25_C
10
100
S-31875—Rev. , 15-Sep-03
Document Number: 72267
10
10, 100 ms
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
1000
100
100