SUD50N03-12P-E3 Vishay, SUD50N03-12P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-12P-E3
• Description: MOSFET Power 30V 17.5A 46.8W
• Manufacturer: Vishay

Specifications of SUD50N03-12P-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 6500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUD50N03-12P
Vishay Siliconix
www.vishay.com
4
THERMAL RATINGS
20
16
12
8
4
0
0.01
0.01
0
0.1
0.1
2
1
2
1
10
10
25
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Maximum Drain Current vs.
Single Pulse
T
A
0.05
Ambiemt Temperature
50
- Ambient Temperature (_C)
0.02
10
10
75
-3
-3
100
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
-2
150
10
-2
New Product
175
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-1
10
-1
1000
0.01
100
1
0.1
10
1
0.1
by r
Limited
DS(on)
1
V
DS
10
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
A
1
= 25_C
10
100
S-31875—Rev. , 15-Sep-03
Document Number: 72267
10
10, 100 ms
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
1000
100
100