2N6661-E3 Vishay, 2N6661-E3 Datasheet - Page 2

• Manufacturer Part Number: 2N6661-E3
• Description: MOSFET Power 90V 0.9A
• Manufacturer: Vishay

Specifications of 2N6661-E3

• Transistor Polarity: N-Channel
• Package / Case: TO-205AD
• Drain-source Breakdown Voltage: 90 V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.9 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Stud
• On Resistance Rds(on): 4ohm
• Current Rating: 900mA
• Leaded Process Compatible: Yes
• Gate-source Voltage: 2V
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N6661-2
Vishay Siliconix
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Zero Gate Voltage Drain Current
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Switching
Turn-On Time
Turn-Off Time
c
b
b
b
J
= 25 °C, unless otherwise noted
Symbol
R
V
I
I
C
DS(on)
t
V
GS(th)
I
D(on)
V
C
C
C
GSS
t
DSS
OFF
g
ON
DS
SD
oss
rss
iss
fs
ds
New Product
V
V
V
V
DS
V
V
I
I
DS
V
V
V
DS
V
S
D
DS
V
DS
DS
DD
GS
DS
GS
Test Conditions
GS
= 0.86 A, V
= 25 V, V
= 7.5 V, I
≅ 1 A, V
= 0 V, V
= 10 V, V
= 72 V, V
= 72 V, V
= V
= 25 V,
= 0 V, I
T
R
= 5 V, I
= 10 V, I
A
f = 1 MHz
GS
GS
= 125 °C
= 23 Ω
, I
GEN
GS
D
D
RL
D
GS
D
GS
GS
GS
GS
= 10 µA
= 0.475 A
D
= 0.3 A
= 1 mA
= ± 20 V
T
= 23 Ω
= 10 V
= 1 A
T
T
T
= 10 V
A
= 0 V
= 0 V
= 0 V
= 0 V,
A
A
A
= 125 °C
= - 55 °C
= 125 °C
= 125 °C
d
Typ.
125
340
1.6
1.8
1.3
1.8
3.8
3.6
6.7
0.9
35
15
30
2
6
8
a
Min.
170
0.8
0.3
0.7
90
S-81302-Rev. A, 09-Jun-08
Document Number: 68632
Limits
± 100
± 500
Max.
100
2.5
5.3
7.5
1.4
50
40
10
10
10
2
1
4
Unit
mS
nA
µA
pF
ns
Ω
V
A
V