2N6661-E3 Vishay, 2N6661-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N6661-E3
• Description: MOSFET Power 90V 0.9A
• Manufacturer: Vishay

Specifications of 2N6661-E3

• Transistor Polarity: N-Channel
• Package / Case: TO-205AD
• Drain-source Breakdown Voltage: 90 V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.9 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Stud
• On Resistance Rds(on): 4ohm
• Current Rating: 900mA
• Leaded Process Compatible: Yes
• Gate-source Voltage: 2V
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N6661-2
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.5
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
0
0
0
0
0
On-Resistance vs. Drain Current
1.0
2
5 .
Ohmic Region Characteristics
V
Transfer Characteristics
V
GS
V
DS
GS
- Gate-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 10 V
I
D
1.0
2.0
V
4
- Drain Current (A)
GS
= 10 V
125 °C
25 °C
1.5
3.0
6
V
DS
= 15 V
2.0
4.0
8
6 V
5 V
4 V
3 V
2 V
2
New Product
5.0
1
5 .
0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
80
60
40
20
Normalized On-Resistance vs. Junction Temperature
7
6
5
4
3
2
1
0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
V
Output Characteristics for Low Gate Drive
GS
V
GS
= 3 V
I
- 10
D
0.4
= 10 V
4
= 0.1 A
V
V
T
DS
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-Source Voltage (V)
2.8 V
0.8
30
8
1.8 V
2.0 V
2.2 V
2.6 V
2.4 V
0.5 A
S-81302-Rev. A, 09-Jun-08
Document Number: 68632
1.2
12
70
110
1.6
16
1.0 A
2.0
20
150