SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP75P05-08-E3
• Description: MOSFET Power 55V 75A 250W
• Manufacturer: Vishay

Specifications of SUP75P05-08-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2V
• Fall Time: 175 ns
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70891
S-99404—Rev. B, 29-Nov-99
12000
10000
8000
6000
4000
2000
250
200
150
100
120
50
90
60
30
0
0
0
0
0
0
C
rss
20
11
V
V
2
DS
DS
Output Characteristics
T
C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
C
oss
Transconductance
I
= –55 C
D
– Drain Current (A)
Capacitance
V
40
22
4
GS
= 10 thru 7 V
60
33
6
6 V
C
iss
80
44
8
125 C
25 C
5 V
4 V
3 V
100
10
55
New Product
0.06
0.05
0.04
0.03
0.02
0.01
200
160
120
80
40
20
16
12
0
0
8
4
0
0
0
0
V
I
D
DS
= 75 A
On-Resistance vs. Drain Current
20
50
1
= 30 V
V
GS
Transfer Characteristics
Q
g
– Gate-to-Source Voltage (V)
SUP/SUB75P05-08
I
100
D
– Total Gate Charge (nC)
40
2
www.vishay.com FaxBack 408-970-5600
V
– Drain Current (A)
Gate Charge
GS
= 4.5 V
150
Vishay Siliconix
60
3
T
25 C
C
= –55 C
200
80
4
V
GS
100
250
= 10 V
5
125 C
120
300
6
2-3