SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 3
![MOSFET Power 55V 75A 250W](/photos/19/7/190743/3833580_sml.gif)
SUP75P05-08-E3
Manufacturer Part Number
SUP75P05-08-E3
Description
MOSFET Power 55V 75A 250W
Manufacturer
Vishay
Datasheet
1.SUP75P05-08-E3.pdf
(6 pages)
Specifications of SUP75P05-08-E3
Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Continuous Drain Current Id
-75A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2V
Fall Time
175 ns
Rise Time
140 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
12000
10000
8000
6000
4000
2000
250
200
150
100
120
50
90
60
30
0
0
0
0
0
0
C
rss
20
11
V
V
2
DS
DS
Output Characteristics
T
C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
C
oss
Transconductance
I
= –55 C
D
– Drain Current (A)
Capacitance
V
40
22
4
GS
= 10 thru 7 V
60
33
6
6 V
C
iss
80
44
8
125 C
25 C
5 V
4 V
3 V
100
10
55
New Product
0.06
0.05
0.04
0.03
0.02
0.01
200
160
120
80
40
20
16
12
0
0
8
4
0
0
0
0
V
I
D
DS
= 75 A
On-Resistance vs. Drain Current
20
50
1
= 30 V
V
GS
Transfer Characteristics
Q
g
– Gate-to-Source Voltage (V)
SUP/SUB75P05-08
I
100
D
– Total Gate Charge (nC)
40
2
www.vishay.com FaxBack 408-970-5600
V
– Drain Current (A)
Gate Charge
GS
= 4.5 V
150
Vishay Siliconix
60
3
T
25 C
C
= –55 C
200
80
4
V
GS
100
250
= 10 V
5
125 C
120
300
6
2-3