SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 4
![MOSFET Power 55V 75A 250W](/photos/19/7/190743/3833580_sml.gif)
SUP75P05-08-E3
Manufacturer Part Number
SUP75P05-08-E3
Description
MOSFET Power 55V 75A 250W
Manufacturer
Vishay
Datasheet
1.SUP75P05-08-E3.pdf
(6 pages)
Specifications of SUP75P05-08-E3
Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Continuous Drain Current Id
-75A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2V
Fall Time
175 ns
Rise Time
140 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SUP/SUB75P05-08
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
1000
2.0
1.6
1.2
0.8
0.4
100
0.00001
0.1
10
0
–50
1
V
I
–25
On-Resistance vs. Junction Temperature
D
I
AV
GS
= 30 A
0.0001
(A) @ T
= 10 V
T
0
Avalanche Current vs. Time
J
– Junction Temperature ( C)
J
25
= 150 C
0.001
50
t
in
I
(Sec)
AV
75
(A) @ T
0.01
100
J
= 25 C
125
0.1
150
175
1
New Product
100
10
70
65
60
55
50
45
40
1
–50
0
–25
Source-Drain Diode Forward Voltage
I
D
T
J
= 250 A
= 150 C
V
T
0
SD
Drain Source Breakdown vs.
J
– Junction Temperature ( C)
– Source-to-Drain Voltage (V)
Junction Temperature
25
50
1
T
75
J
S-99404—Rev. B, 29-Nov-99
= 25 C
Document Number: 70891
100
125
150
175
10