SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP75P05-08-E3
• Description: MOSFET Power 55V 75A 250W
• Manufacturer: Vishay

Specifications of SUP75P05-08-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2V
• Fall Time: 175 ns
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUP/SUB75P05-08
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
1000
2.0
1.6
1.2
0.8
0.4
100
0.00001
0.1
10
0
–50
1
V
I
–25
On-Resistance vs. Junction Temperature
D
I
AV
GS
= 30 A
0.0001
(A) @ T
= 10 V
T
0
Avalanche Current vs. Time
J
– Junction Temperature ( C)
J
25
= 150 C
0.001
50
t
in
I
(Sec)
AV
75
(A) @ T
0.01
100
J
= 25 C
125
0.1
150
175
1
New Product
100
10
70
65
60
55
50
45
40
1
–50
0
–25
Source-Drain Diode Forward Voltage
I
D
T
J
= 250 A
= 150 C
V
T
0
SD
Drain Source Breakdown vs.
J
– Junction Temperature ( C)
– Source-to-Drain Voltage (V)
Junction Temperature
25
50
1
T
75
J
S-99404—Rev. B, 29-Nov-99
= 25 C
Document Number: 70891
100
125
150
175
10