SUD40N10-25-E3 Vishay, SUD40N10-25-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD40N10-25-E3
• Description: MOSFET Power 100V 40A 33W
• Manufacturer: Vishay

Specifications of SUD40N10-25-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUD40N10-25
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
c
a
c
c
c
c
c
c
b
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
C
V
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
R
SM
t
oss
t
t
DS
rss
SD
iss
rr
fs
gs
gd
r
f
g
g
C
= 25 °C
V
V
I
V
V
V
V
D
DS
DS
GS
GS
GS
DS
≅ 40 A, V
= 100 V, V
= 100 V, V
I
= 10 V, I
= 10 V, I
F
V
V
= 0 V, V
= 50 V, V
V
V
V
V
V
V
DD
= 40 A, dI/dt = 100 A/µs
DS
V
DS
DS
I
GS
DS
F
GS
DS
GS
Test Conditions
= 40 A, V
= 0 V, V
= 50 V, R
= V
= 100 V, V
= 0 V, I
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
D
D
DS
GS
GS
GS
GS
= 40 A, T
= 40 A, T
, I
= 25 V, F = 1 MHz
= 10 V, R
= 0 V, T
= 0 V, T
D
= 10 V, I
GS
D
GS
GS
L
= 250 µA
D
D
D
= 250 µA
GS
= 1.25 Ω
= ± 20 V
= 40 A
= 40 A
= 10 V
= 20 A
= 0 V
= 0 V
J
J
J
J
= 125 °C
= 175 °C
g
D
= 125 °C
= 175 °C
= 2.5 Ω
= 40 A
Min.
100
1.0
70
1
Typ.
0.022
2400
0.02
290
120
1.0
70
40
11
40
15
80
75
9
8
S-81732-Rev. E, 04-Aug-08
a
Document Number: 71140
± 100
0.025
0.063
0.028
Max.
0.05
250
120
120
3.0
3.5
1.5
50
60
13
60
25
70
1
Unit
nA
µA
pF
nC
ns
ns
Ω
Ω
V
A
S
A
V