SUD40N10-25-E3 Vishay, SUD40N10-25-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD40N10-25-E3
• Description: MOSFET Power 100V 40A 33W
• Manufacturer: Vishay

Specifications of SUD40N10-25-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71140
S-81732-Rev. E, 04-Aug-08
4000
3000
2000
1000
100
160
120
80
60
40
20
80
40
0
0
0
0
0
0
T
10
C
C
20
V
= - 55 °C
2
rss
GS
V
V
DS
DS
Output Characteristics
= 10 thru 6 V
Transconductance
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
I
D
Capacitance
- Drain Current (A)
40
4
30
C
oss
60
6
40
C
iss
5 V
80
8
125 °C
50
25 °C
4 V
3 V
100
60
10
0.05
0.04
0.03
0.02
0.01
0.00
100
20
16
12
80
60
40
20
8
4
0
0
0
0
0
V
I
D
DS
= 40 A
On-Resistance vs. Drain Current
= 50 V
2 0
1
V
2 0
Transfer Characteristics
GS
Q
g
- Gate-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
V
- Drain Current (A)
Gate Charge
GS
4 0
2
= 4.5 V
SUD40N10-25
T
25 °C
4 0
C
Vishay Siliconix
= 125 °C
6 0
3
V
www.vishay.com
GS
6 0
8 0
= 10 V
4
- 55 °C
100
80
5
3