SUD40N10-25-E3 Vishay, SUD40N10-25-E3 Datasheet - Page 3
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SUD40N10-25-E3
Manufacturer Part Number
SUD40N10-25-E3
Description
MOSFET Power 100V 40A 33W
Manufacturer
Vishay
Datasheet
1.SUD40N10-25-E3.pdf
(5 pages)
Specifications of SUD40N10-25-E3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
25mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD40N10-25-E3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SUD40N10-25-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71140
S-81732-Rev. E, 04-Aug-08
4000
3000
2000
1000
100
160
120
80
60
40
20
80
40
0
0
0
0
0
0
T
10
C
C
20
V
= - 55 °C
2
rss
GS
V
V
DS
DS
Output Characteristics
= 10 thru 6 V
Transconductance
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
I
D
Capacitance
- Drain Current (A)
40
4
30
C
oss
60
6
40
C
iss
5 V
80
8
125 °C
50
25 °C
4 V
3 V
100
60
10
0.05
0.04
0.03
0.02
0.01
0.00
100
20
16
12
80
60
40
20
8
4
0
0
0
0
0
V
I
D
DS
= 40 A
On-Resistance vs. Drain Current
= 50 V
2 0
1
V
2 0
Transfer Characteristics
GS
Q
g
- Gate-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
V
- Drain Current (A)
Gate Charge
GS
4 0
2
= 4.5 V
SUD40N10-25
T
25 °C
4 0
C
Vishay Siliconix
= 125 °C
6 0
3
V
www.vishay.com
GS
6 0
8 0
= 10 V
4
- 55 °C
100
80
5
3