IPD135N03L G Infineon Technologies, IPD135N03L G Datasheet
IPD135N03L G
Specifications of IPD135N03L G
Related parts for IPD135N03L G
IPD135N03L G Summary of contents
Page 1
... PG-TO252-3-23 PG-TO251-3-11 135N03L 135N03L Symbol Conditions =25 ° = =100 ° =4 =25 ° =4 =100 ° =25 °C D,pulse =25 ° =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max V GS page 1 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L 13.5 mΩ IPU135N03L G PG-TO251-3 135N03L Value Unit 210 kV/µs ±20 V 2008-04-15 ...
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... GS(th = DSS T =25 ° = =125 ° = GSS =4 =20 A DS( |>2 DS(on)max = page 2 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G Value Unit 31 W -55 ... 175 °C 55/175/56 Values Unit min. typ. max 4.9 K 2.2 - 0.1 1 µ 100 - 10 100 nA - 16.4 20.5 mΩ - 11.3 13.5 Ω ...
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... MHz C rss t d( =1.6 Ω d(off g( plateau g(sync 4 = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G Values Unit min. typ. max. - 770 1000 pF - 350 470 - 4.8 6 4.2 5 210 - 0.98 1 2008-04-15 ...
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... Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter 100 ns 1 µs 10 µs 1 100 µ 0.1 0. [V] DS page 4 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 0 ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.04 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L =25 ° 3 [A] D =25 ° [A] D 100 100 2008-04-15 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Coss 10 Crss 0.0 [V] DS page 6 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L =250 µ - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] ...
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... T j(start) 100 10 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.04 14 Typ. gate charge V =f(Q GS gate parameter 100 °C 25 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L =30 A pulsed [nC] gate ate 2008-04-15 ...
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... Package Outline Rev. 1.04 IPD135N03L G IPS135N03L G PG-TO252-3 page 8 IPF135N03L G IPU135N03L G 2008-04-15 ...
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... Package Outline Footprint: Rev. 1.04 IPD135N03L G IPS135N03L G PG-TO252-3-23 Packaging: page 9 IPF135N03L G IPU135N03L G 2008-04-15 ...
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... Package Outline PG-TO251-3-21: Outline Rev. 1.04 IPD135N03L G IPS135N03L G PG-TO251-3-11 page 10 IPF135N03L G IPU135N03L G 2008-04-15 ...
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... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.04 IPD135N03L G IPS135N03L G PG-TO251-3 page 11 IPF135N03L G IPU135N03L G 2008-04-15 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.04 IPD135N03L G IPS135N03L G page 12 IPF135N03L G IPU135N03L G ...