SUP85N10-10-E3 Vishay, SUP85N10-10-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP85N10-10-E3
• Description: MOSFET Power 100V 85A 250W
• Manufacturer: Vishay

Specifications of SUP85N10-10-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUP/SUB85N10-10
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
g
Q
Q
SM
I
t
oss
t
t
SD
rss
iss
S
rr
fs
gs
gd
r
f
rr
g
C
= 25 °C)
V
V
I
V
V
V
D
DS
DS
V
GS
GS
DS
GS
≅ 85 A, V
= 100 V, V
= 100 V, V
I
= 10 V, I
= 10 V, I
b
F
V
V
= 50 V, V
V
V
= 0 V, V
V
V
V
DS
V
= 50 A, di/dt = 100 A/µs
DS
V
DS
DS
I
DD
GS
GS
F
GS
DS
Test Conditions
= 85 A, V
= 0 V, V
= ≥ 5 V, V
= V
= 100 V, V
= 50 V, R
= 0 V, I
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
D
D
DS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, I
D
GS
D
GS
= 250 µA
GS
D
D
L
= 250 µA
D
GS
= ± 20 V
= 30 A
= 30 A
= 0.6 Ω
= 20 A
= 0 V
= 10 V
= 0 V
J
J
J
J
= 125 °C
= 175 °C
D
g
= 125 °C
= 175 °C
= 2.5 Ω
= 85 A
Min
100
120
25
1
0.0085
0.010
6550
0.17
Typ
665
265
105
130
1.0
4.5
17
23
12
90
55
85
S-61008–Rev. D, 12-Jun-06
Document Number: 71141
0.0105
0.0012
± 100
0.017
0.022
Max
0.35
250
160
135
195
240
140
1.5
50
25
85
85
3
1
7
Unit
nA
µA
nC
µC
pF
ns
ns
V
A
Ω
S
A
V
A