SUP85N10-10_06 VISHAY [Vishay Siliconix], SUP85N10-10_06 Datasheet
SUP85N10-10_06
Related parts for SUP85N10-10_06
SUP85N10-10_06 Summary of contents
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... °C (TO-220AB and TO-263 °C (TO-263 PCB Mount (TO-263) Free Air (TO-220AB) SUP/SUB85N10-10 Vishay Siliconix ® Power MOSFET N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 Limit V 100 DS V ± 240 ...
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SUP/SUB85N10-10 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input ...
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TYPICAL CHARACTERISTICS T 250 thru 200 150 100 − Drain-to-Source Voltage (V) DS Output Characteristics 250 200 150 100 − ...
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SUP/SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS T 2 2.0 1.5 1.0 0.5 0 − Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 ...
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THERMAL RATINGS 100 − Ambient Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temterature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...