SI2308DS-T1-GE3 Vishay, SI2308DS-T1-GE3 Datasheet

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... Document Number: 70797 S09-0133-Rev. D, 02-Feb-09 FEATURES • Halogen-free According to IEC 61249-2-21 I (A) D Available 2.0 • TrenchFET 1.7 • 100 % R g TO-236 (SOT-23 Top View Si2308DS (A8)* * Marking Code Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ° ...

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... Si2308DS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static V Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

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... I - Drain Current (A) D On-Resistance vs. Drain Current 2 Total Gate Charge (nC) g Gate Charge Document Number: 70797 S09-0133-Rev. D, 02-Feb- Si2308DS Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 400 300 C iss 200 C 100 oss C rss Drain-to-Source Voltage (V) DS Capacitance 2.0 ...

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... Si2308DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...