SI2308DS-T1-GE3 Vishay, SI2308DS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2308DS-T1-GE3
• Description: MOSFET Small Signal 60V 2.0A 1.25W 160mohm @ 10V
• Manufacturer: Vishay

Specifications of SI2308DS-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation Pd: 1.25W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70797
S09-0133-Rev. D, 02-Feb-09
1.0
0.8
0.6
0.4
0.2
0.0
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 2.0 A
2
= 30 V
1
V
V
DS
3
Q
GS
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
= 4.5 V
I
V
D
GS
Gate Charge
- Drain Current (A)
4
2
= 10 thru 5 V
6
6
3
V
GS
9
8
4
= 10 V
1 V, 2 V
4 V
3 V
10
12
5
400
300
200
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
9
6
3
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
= 2.0 A
= 10 V
6
1
V
V
Transfer Characteristics
DS
T
GS
0
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
oss
- Gate-to-Source Voltage (V)
25 °C
25
T
Capacitance
C
12
2
= 125 °C
50
Vishay Siliconix
C
iss
18
3
75
Si2308DS
- 55 °C
www.vishay.com
100
24
4
125
150
30
5
3