FM22L16-55-TG Ramtron, FM22L16-55-TG Datasheet - Page 3

• Manufacturer Part Number: FM22L16-55-TG
• Description: F-RAM 4M (256Kx16) 55ns
• Manufacturer: Ramtron

Specifications of FM22L16-55-TG

• Organization: 256 Kbit x 16
• Access Time: 55 ns
• Operating Supply Voltage: 2.7 V to 3.6 V
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Memory Size: 4 Mbit
• Interface: Parallel
• Package / Case: TSOP-44
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Functional Truth Table
Notes:
Byte Select Truth Table
Note: Assumes /CE is low and /ZZ is high for all cases. The /UB and /LB pins may be
grounded if 1) the system does not perform byte writes and 2) the device is not
configured as a 256Kx8.
Rev. 2.0
Apr. 2011
/WE
/CE
1)
2)
3)
4)
H
H
L
X
H
L
L
L
L
H=Logic High, L=Logic Low, V=Valid Data, X=Don’t Care.
/WE-controlled write cycle begins as a Read cycle and A(16:2) is latched then.
Addresses A(1:0) must remain stable for at least 10 ns during page mode operation.
For write cycles, data-in is latched on the rising edge of /CE or /WE, whichever comes first.
/OE
H
X
X
L
/WE
X
X
H
H
H
X
L
/LB
X
H
H
H
L
L
L
L
1,2
No Change
No Change
A(16:2)
Change
X
X
V
V
V
X
Figure 2. Simplified Sleep/Standby State Diagram
/UB
X
H
H
H
L
L
L
L
Read upper byte; Hi-Z lower byte
Read lower byte; Hi-Z upper byte
Write upper byte; Mask lower byte
Write lower byte; Mask upper byte
Change
Operation
Read; Outputs Disabled
Read both bytes
Write both bytes
A(1:0)
X
X
V
V
V
V
V
X
/ZZ
H
H
H
H
H
H
H
H
L
Page Mode Read
/CE-Controlled Write
/WE-Controlled Write
Page Mode Write
Starts Precharge
Operation
Sleep Mode
Standby/Idle
Read
Random Read
3
FM21L16 - 128Kx16 FRAM
2
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