1ED020I12-F Infineon Technologies, 1ED020I12-F Datasheet - Page 11

• Manufacturer Part Number: 1ED020I12-F
• Description: MOSFET & Power Driver ICs SNGL IGBT Driver IC IGBT Driver IC
• Manufacturer: Infineon Technologies

Specifications of 1ED020I12-F

• Product: Driver ICs - Various
• Rise Time: 400 ns
• Fall Time: 600 ns
• Supply Voltage (max): 5.5 V, 20 V, 0 V
• Supply Voltage (min): 4.5 V, 13 V, - 12 V
• Maximum Power Dissipation: 700 mW
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Package / Case: PG-DSO-16-15
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.2
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all
Parameter
Positive power supply output side
Negative power supply output side
Maximum power supply voltage output side
(V
Positive power supply input side
Logic input voltages
(IN+,IN-,RST)
Pin CLAMP voltage
Pin DESAT voltage
Ambient temperature
Common mode transient immunity
1) With respect to GND2.
2) may be exceeded during short circuit clamping
3) The parameter is not subject to production test - verified by design/characterization
4.3
Note: Unless otherwise noted all parameters refer to GND1.
Parameter
Positive power supply output side
Negative power supply output side
Positive power supply input side
1) With respect to GND2.
Datasheet
VCC2
parameters refer to GND1.
-V
VEE2
)
Operating Parameters
Recommended Operating Parameters
3)
Symbol
V
V
V
V
V
V
V
T
Symbol
V
V
V
A
VCC2
VEE2
max2
VCC1
LogicIN
CLAMP
DESAT
VCC2
VEE2
VCC1
V
11
ISO
/dt|
V
Values
VEE2
min.
-0.3
-0.3
-12
-40
4.5
13
—
15
-8
5
Limit Values
-0.3
Unit Remarks
V
V
V
V
V
max.
VCC2
105
5.5
5.5
20
28
VCC2
50
0
1)
1)
2)
Unit
kV/µs @ 500V
°C
V
V
V
V
V
V
V
Version 2.2, 2009-12-03
Electrical Parameters
EICEDRIVER
Remarks
1)
1)
1)
1ED020I12-F
TM