PN5321A3HN/C106;55 NXP Semiconductors, PN5321A3HN/C106;55 Datasheet - Page 18

• Manufacturer Part Number: PN5321A3HN/C106;55
• Description: RF Wireless Misc Combined Analogue Digital IC
• Manufacturer: NXP Semiconductors

Specifications of PN5321A3HN/C106;55

• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935285223551

Philips Semiconductors
10. Limiting values
Table 13:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 14:
11. Recommended operating conditions
Table 15:
[1]
[2]
12. Thermal characteristics
Table 16:
9397 750 XXXXX
Short form data sheet
Symbol
PVDD
VBAT
P
I
I
T
T
Symbol
ESDH
ESDM
ESDC
Symbol
Tamb
VBAT
PVDD
Symbol
R
TX1
TX2
stg
j
tot
thj-a
Supply voltage of VBAT below 3.3 V reduces the performance (e.g. the achievable operating distance).
VSS represents DVSS, TVSS1, TVSS2, AVSS.
Limiting values
ESD Characteristics
Operating conditions
Thermal characteristics
Parameter
Supply Voltage
Battery Supply Voltage
Total power dissipation
Maximum current in transmitter TX1
Maximum current in transmitter TX2
Storage temperature
Junction temperature
Parameter
ESD Susceptibility (Human Body model)
ESD Susceptibility (Machine model)
ESD Susceptibility (Charge Device model) Field induced model
Parameter
Ambiant Temperature
Battery Supply
Voltage
Supply voltage from
host interface
Parameter
thermal resistance from junction to
ambient (for HVQFN40 package)
Conditions
VSS = 0V
VSS=0V
Rev. 1.2 — 31 March 2011
Conditions
Conditions
in free air with exposed pad soldered
on a 4 layer Jedec PCB-0.5
Conditions
1500 Ohm, 100pF
0.75 μH, 200 pF
[1]
,
[2]
Min
-30
2.7
1.6
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Specification
JESD22-A114-B
JESD22-A114-A
JESC22-C101-A
Typ
+25
5
1.8-3.3
Min
-0.5
-0.5
-100
-100
-55
PN532/C1
Typ
35
Max
+85
5.4
3.6
Max
4
6.0
tbd
100
100
150
100
NFC controller
Value
2 KV
200 V
1 KV
Unit
K/W
Unit
V
V
mW
mA
mA
°C
°C
Unit
°C
V
V
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