BGS 12AL7-4 E6327 Infineon Technologies, BGS 12AL7-4 E6327 Datasheet - Page 9

RF Switch ICs GEN PURPOSE RF MOS SWITCH

BGS 12AL7-4 E6327

Manufacturer Part Number
BGS 12AL7-4 E6327
Description
RF Switch ICs GEN PURPOSE RF MOS SWITCH
Manufacturer
Infineon Technologies
Datasheet

Specifications of BGS 12AL7-4 E6327

Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Mounting Style
SMD/SMT
Number Of Switches
Single
Switch Configuration
Single SPDT
Package / Case
TSLP
Frequency (max)
3GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGS12AL74E6327XT
2
Table 1
Parameter
Storage temperature range
DC Voltage at all pins to GND
RF power max. at all RF ports
ESD Capability
Human Body Model IEC61340-3-1
Machine Model IEC61340-3-2
Table 2
Parameter
Ambient temperature
RF Frequency
Control voltage low
Control voltage high
Supply voltage
Current consumption Vdd Pin (over
temperature)
Current Consumption Vctrl Pin
Power Range
(VSWR ∞: 1)
(VSWR 3: 1)
(VSWR 1: 1)
1) Supply voltage must be connected before Control Voltage
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Preliminary Data Sheet
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Maximum Ratings
Maximum Ratings
Operation Ranges
1)
Symbol
T
V
P
V
Symbol
T
f
V
V
V
I
I
P
Vdd
Ctrl
stg
A
DC
IN
ESD
CtrL
CtrlH
dd
in
9
Min.
-65
Min.
-30
0.03
-0.3
1.4
2.4
80
Values
Values
Typ.
Typ.
Max.
150
5
24
1000
100
Max.
85
3
0.3
Vdd
3.6
350
30
15
18
21
Unit
°C
V
dBm
V
V
Unit
°C
GHz
V
V
V
μA
μA
dBm
Revision 1.3, 2009-06-24
SPDT RF Switch
Maximum Ratings
Note /
Test Condition
Note /
Test Condition
BGS12AL7-4

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