DMN3730UFB-7 Diodes Inc, DMN3730UFB-7 Datasheet - Page 2

• Manufacturer Part Number: DMN3730UFB-7
• Description: MOSFET & Power Driver ICs 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
• Manufacturer: Diodes Inc

Specifications of DMN3730UFB-7

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 460mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: DFN1006
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
5. Same as note 4, except the device measured at t ≤ 10 sec.
6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.
7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
steady-state condition.
Characteristic
Characteristic
Characteristic
@T
V
GS
A
= 4.5V
= 25°C unless otherwise specified
J
= 25°C
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
T
A
=70°C (Note 5)
(Note 5)
(Note 4)
(Note 6)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
|
2 of 6
0.45
Min
30
40
Symbol
Symbol
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
J
V
V
R
,
I
P
DSS
GSS
I
DM
T
θJA
D
D
STG
64.3
Typ
0.7
6.1
4.5
1.6
0.2
0.2
3.5
2.8
70
38
13
-
-
-
-
-
-
Max
0.95
460
560
730
1.2
1
3
Diodes Incorporated
-
-
-
-
-
-
-
-
-
-
-
-
-
A Product Line of
-55 to +150
Value
Value
0.91
0.73
0.75
0.69
0.47
Unit
mΩ
180
258
mS
nC
nC
nC
30
±8
μA
μA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
V
3
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
V
D
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
GS
DS
GS
= 1A
= 0V, I
= 30V, V
= ±8V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 3V, I
= 0V, I
= 25V, V
= 0V, V
= 4.5V, V
= 10V, I
= 10V, R
GS
DMN3730UFB
Test Condition
, I
D
D
S
GS
D
D
= 10mA
= 300mA
= 10μA
D
D
D
GS
DS
GS
G
DS
= 250μA
= 1A
= 200mA
= 100mA
= 75mA
= 0V, f = 1MHz
= 6Ω
= 0V
= 0V
= 0V,
© Diodes Incorporated
= 15V,
°C/W
Unit
Unit
°C
W
V
A
A
March 2011