DMN3730UFB-7 Diodes Inc, DMN3730UFB-7 Datasheet - Page 4

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DMN3730UFB-7

Manufacturer Part Number
DMN3730UFB-7
Description
MOSFET & Power Driver ICs 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
Manufacturer
Diodes Inc
Datasheet

Specifications of DMN3730UFB-7

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
460mohm
Rds(on) Test Voltage Vgs
4.5V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
DFN1006
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN3730UFB-7
Quantity:
300 000
Company:
Part Number:
DMN3730UFB-7
Quantity:
139 000
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
1.2
1.0
0.8
0.6
0.4
0.2
100
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
0
8
6
4
2
0
1
-50 -25
0
0
T , AMBIENT TEMPERATURE (°C)
0.5
Fig. 11 Gate-Charge Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
C
5
A
Q , TOTAL GATE CHARGE (nC)
DS
rss
Fig. 9 Typical Total Capacitance
g
0
C
oss
C
10
1
iss
25
V
DS
50
I = 1A
1.5
15
D
I = 250µA
D
= 15V
75
20
2
I = 1mA
D
100
f = 1MHz
2.5
25
125 150
30
3
www.diodes.com
4 of 6
10,000
1,000
2.0
1.6
1.2
0.8
0.4
100
10
0
1
0
0
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
0.2
SD
V , DRAIN-SOURCE VOLTAGE (V)
Diodes Incorporated
5
DS
Fig. 10 Typical Leakage Current
A Product Line of
vs. Drain-Source Voltage
0.4
10
0.6
15
T = 25°C
A
T = 150°C
T = 125°C
T = 85°C
A
A
0.8
T = 25°C
A
A
20
DMN3730UFB
1
25
© Diodes Incorporated
March 2011
1.2
30

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