PSMN030-60YS,115 NXP Semiconductors, PSMN030-60YS,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN030-60YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN030-60YS,115

• Input Capacitance (ciss) @ Vds: 686pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 49.6 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 21 A
• Power Dissipation: 56 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5584-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN030-60YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.05
0.1
Thermal characteristics
0.2
0.02
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 25 October 2010
Conditions
see
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Figure 4
10
-3
10
-2
PSMN030-60YS
Min
-
10
P
-1
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
003aae117
(s)
δ =
Max
2.7
T
t
p
t
1
Unit
K/W
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