PSMN069-100YS,115 NXP Semiconductors, PSMN069-100YS,115 Datasheet
PSMN069-100YS,115
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PSMN069-100YS,115 Summary of contents
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... PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev. 02 — 25 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... Figure 15 non-repetitive drain-source avalanche energy unclamped; R Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS Min Typ = 4.8 D Figure 14 ° j(init) ≤ 100 V; sup = 50 Ω GS ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS Min - = 20 kΩ -20 Figure 1 - Figure °C; see Figure -55 - ° ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN069-100YS Product data sheet N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET / All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS 003aae152 =10 μ 100 μ 100 ms 2 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN069-100YS Product data sheet N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS Min Typ Max - 1.6 2.7 003a a e 153 δ ...
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... Figure see Figure 14; DS see Figure MHz °C; see Figure 3.3 Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS Min Typ Max = -55 ° °C 100 - - 4.7 = 125 ° °C - 0.07 ...
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... I (A) D Fig 6. 003a a e 158 250 R DSon (mΩ) 200 C iss 150 C rss 100 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS Min Typ = 25 ° 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... V ( (V) DS Fig 10. Gate-source threshold voltage as a function of 003aae487 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS 5 V GS(th) (V) 4 max 3 typ min - junction temperature 3.2 a 2.4 1.6 ...
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... I (A) D Fig 14. Gate charge waveform definitions 003a a e 160 (pF (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS GS(pl) V GS(th GS1 GS2 G(tot) − function of drain-source voltage; typical values © ...
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... PSMN069-100YS Product data sheet N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET ( 175 ° ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS 003a a e 162 1.5 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN069-100YS v.2 20101025 • Modifications: Status changed from objective to product. • Various changes to content. PSMN069-100YS v.1 20100831 PSMN069-100YS Product data sheet N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Data sheet status ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 October 2010 PSMN069-100YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 October 2010 Document identifier: PSMN069-100YS ...