BUK7Y25-40B,115 NXP Semiconductors, BUK7Y25-40B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK7Y25-40B,115
• Description: MOSFET N-CH 40V 35.3A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y25-40B,115

• Input Capacitance (ciss) @ Vds: 693pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 35.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12.1nC @ 10V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5518-2

NXP Semiconductors
BUK7Y25-40B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
DS
= 14 V
4
8
V
DS
(A)
I
S
40
30
20
10
= 32 V
12
0
0.4
All information provided in this document is subject to legal disclaimers.
Q
003aac918
G
(nC)
T
j
= 175 °C
16
0.6
Rev. 04 — 7 April 2010
0.8
Fig 15. Input, output and reverse transfer capacitances
T
j
= 25 °C
(pF)
C
10
10
10
3
2
10
1
as a function of drain-source voltage; typical
values.
-1
N-channel TrenchMOS standard level FET
003aac919
V
SD
(V)
1.2
1
BUK7Y25-40B
10
© NXP B.V. 2010. All rights reserved.
V
DS
C
C
C
003aac916
rss
iss
oss
(V)
10
2
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