BUK9Y22-30B,115 NXP Semiconductors, BUK9Y22-30B,115 Datasheet - Page 5

• Manufacturer Part Number: BUK9Y22-30B,115
• Description: MOSFET N-CH 30V 37.7A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y22-30B,115

• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 37.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10.5nC @ 5V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5527-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9Y22-30B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th (j-mb)
(A)
I
D
10
10
10
10
10
10
-1
10
-1
-2
3
2
1
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
1
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance
from junction to
mounting base
Limit R
10
-5
DSon
= V
DS
/ I
D
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 5
Rev. 04 — 7 April 2010
DC
10
10
-3
10
N-channel TrenchMOS logic level FET
-2
10μ s
100μ s
1ms
10ms
100ms
BUK9Y22-30B
Min
-
V
DS
10
P
-1
(V)
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aac617
003aac483
δ =
Max
2.53
t
T
p
t
10
1
2
Unit
K/W
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