PSMN1R5-30YL,115 NXP Semiconductors, PSMN1R5-30YL,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R5-30YL,115
• Description: MOSFET N-CH 30V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL,115

• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5589-2

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Normalized drain-source on-state resistance
10
10
10
10
10
10
(A)
a
I
1.5
0.5
D
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
min
1
60
typ
2
120
V
All information provided in this document is subject to legal disclaimers.
GS
003aab271
T
max
j
(V)
( ° C)
03aa27
180
3
Rev. 01 — 9 April 2010
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Gate charge waveform definitions
V
GS (th)
(V)
3
2
1
0
-60
junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
PSMN1R5-30YL
GS
Q
max
typ
min
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
003a a c982
T
j
(°C)
180
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