PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN023-80LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS,115

• Input Capacitance (ciss) @ Vds: 1295pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5583-2

NXP Semiconductors
PSMN023-80LS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
DS on
(V)
GS
80
60
40
20
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
T
T
0
0
j
j
= 25°C; t
= 25°C; I
4.4
10
V
4.5
DS
p
D
= 300 µs
= 30 A
= 16 V
10
4.6
20
4.8
30
64 V
20
V
GS
6.0
Q
40 V
(V) = 5.0
G
40
All information provided in this document is subject to legal disclaimers.
003a a e 504
003aae505
(nC)
6.5
I
D
(A)
5.5
8.0
50
30
Rev. 2 — 18 August 2010
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
Q
GS1
1
I
Q
D
GS
PSMN023-80LS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aae506
(V)
C
C
C
rss
oss
iss
10
2
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