BUK7Y12-55B,115 NXP Semiconductors, BUK7Y12-55B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y12-55B,115
• Description: MOSFET N-CH 55V 61.8A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y12-55B,115

• Input Capacitance (ciss) @ Vds: 2067pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61.8A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 35.2nC @ 10V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5514-2

NXP Semiconductors
BUK7Y12-55B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
fs
I
60
D
40
20
56
44
32
20
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
20
10
1
20
2
6.2
3
40
V
All information provided in this document is subject to legal disclaimers.
GS
4
I
D
003aad469
003aad467
V
(A)
(V) =
DS
5.7
5.4
(V)
5
6
60
5
Rev. 03 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
DS on
(A)
I
D
40
30
20
10
60
40
20
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS standard level FET
5
2
5.4
T
20
j
= 175 °C
V
BUK7Y12-55B
GS
4
(V) =
5.7
40
25 °C
6
6
© NXP B.V. 2010. All rights reserved.
I
003aad470
V
D
003aad468
GS
(A)
(V)
6.2
10
20
60
8
7 of 14