EPC2015 EPC, EPC2015 Datasheet - Page 3

• Manufacturer Part Number: EPC2015
• Description: TRANS GAN 40V 33A BUMPED DIE
• Manufacturer: EPC
• Series: eGaN™r

Specifications of EPC2015

• Mfg Application Notes: Second Generation eGaN® FETs
• Rohs Information: Lead Free/RoHS Statement
• Input Capacitance (ciss) @ Vds: 1100pF @ 20V
• Fet Type: GaNFET N-Channel, Gallium Nitride
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 33A, 5V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2.5V @ 9mA
• Gate Charge (qg) @ Vgs: 10.5nC @ 5V
• Mounting Type: Surface Mount
• Package / Case: Die Outline (11-Solder Bar)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Other names: 917-1019-2

eGaN™ FET DATASHEET
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
150
100
50
1.6
1.4
1.2
0.8
0.6
0.4
0.2
-20
1
0
0
Figure 7: Reverse Drain-Source Characteristics
Figure 9: Normalized Threshold Voltage vs. Temperature
0
Figure 5: Capacitance
I
D
= 9 mA
0.5
0
25˚C
125˚C
20
1
10
V
V
T
V
SD
DS
J
GS
– Junction Temperature ( ˚C )
1.5
– Source to Drain Voltage (V)
– Drain to Source Voltage (V)
40
– Gate to Source Voltage (V)
2
60
20
2.5
80
100
3
30
3.5
C
C
C
120
OSS
ISS
RSS
= C
= C
= C
GD
GD
GD
+ C
140
+ C
4
GS
SD
4.5
.025
.015
.005
4.5
3.5
2.5
1.5
0.5
.02
.01
0
5
4
3
2
1
-20
0
0
Figure 8: Normalized On Resistance Vs Temperature
Figure 10: Gate Current
0
Figure 6: Gate Charge
I
V
I
V
D
D
D
GS
= 33 A
= 33 A
= 20 V
= 5 V
0
25˚C
125˚C
1
2
20
V
T
J
GS
V
– Junction Temperature ( ˚C )
GS
– Gate-to-Source Voltage (V)
40
4
2
– Gate-to-Source Voltage (V)
Q
G
– Gate Charge (nC)
60
6
3
80
100
4
8
120
10
5
140
EPC2015
| PAGE 3
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