EPC2015 EPC, EPC2015 Datasheet - Page 5

• Manufacturer Part Number: EPC2015
• Description: TRANS GAN 40V 33A BUMPED DIE
• Manufacturer: EPC
• Series: eGaN™r

Specifications of EPC2015

• Mfg Application Notes: Second Generation eGaN® FETs
• Rohs Information: Lead Free/RoHS Statement
• Input Capacitance (ciss) @ Vds: 1100pF @ 20V
• Fet Type: GaNFET N-Channel, Gallium Nitride
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 33A, 5V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2.5V @ 9mA
• Gate Charge (qg) @ Vgs: 10.5nC @ 5V
• Mounting Type: Surface Mount
• Package / Case: Die Outline (11-Solder Bar)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Other names: 917-1019-2

eGaN™ FET DATASHEET
RECOMMENDED
LAND PATTERN
(units in µm)
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
DIE OUTLINE
Solder Bar View
Side View
e
2
1
f
g
3
4
5
6
A
X8
g
X9
7
f
8
9
SEATING PLANE
10
11
DIM
Pad no. 1 is Gate;
Pads no. 3, 5, 7, 9, 11 are Drain;
Pads no. 4, 6, 8, 10 are Source;
Pad no. 2 is Substrate.
A
B
d
e
c
g
f
4075
1602
1379
MIN
577
235
195
400
MICROMETERS
Nominal
4105
1632
1382
580
250
200
400
change without notice.
Information subject to
Revised March, 2011
EPC2015
| PAGE 5
MAX
4135
1662
1385
583
265
205
400