FDN8601 Fairchild Semiconductor, FDN8601 Datasheet - Page 4

• Manufacturer Part Number: FDN8601
• Description: MOSFET N-CH 100V 2.7A 3SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN8601

• Input Capacitance (ciss) @ Vds: 210pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 109 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SOT-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 85.4 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Fall Time: 3.4 ns
• Gate Charge Qg: 3 nC
• Rise Time: 1.3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
Typical Characteristics
10
7
6
5
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
300
100
0.5
10
0
1
10
I
D
Figure 9.
-4
= 1.5 A
Switching Capability
Gate Charge Characteristics
t
AV
1
, TIME IN AVALANCHE (ms)
V
Unclamped Inductive
DD
Q
T
g
J
, GATE CHARGE (nC)
= 50 V
= 125
10
V
DD
0.1
-3
= 25 V
o
C
T
Figure 11. Single Pulse Maximum Power Dissipation
2
J
= 25
T
V
J
DD
o
C
= 25 °C unless otherwise noted
T
= 75 V
J
= 100
10
-2
3
o
C
1
t, PULSE WIDTH (sec)
2
4
10
-1
4
0.001
0.01
300
100
0.1
10
20
10
1
1
1
0.1
0.1
THIS AREA IS
LIMITED BY r
Figure 8.
f = 1 MHz
V
Figure 10.
GS
= 0 V
V
V
DS
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
SINGLE PULSE
T
R
T
Capacitance vs Drain
DS(on)
10
1
J
A
T
JA
= MAX RATED
= 25
1
Forward Bias Safe
= 180
o
C
o
C/W
10
100
SINGLE PULSE
R
T
A
T
JA
10
= 25
= 180
o
C
www.fairchildsemi.com
o
100
C/W
C
C
C
100 us
1 s
DC
1 ms
10 ms
100 ms
10 s
oss
iss
rss
1000
100
400