FDT86246 Fairchild Semiconductor, FDT86246 Datasheet
FDT86246
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FDT86246 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86246 FDT86246 ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C ® MOSFET General Description = 2 A This N-Channel D Semiconductor‘s advanced Power Trench = 1 been optimized for r ruggedness ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 1 ©2010 Fairchild Semiconductor Corporation FDT86246 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...
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... T J Figure 3. Normalized On-Resistance vs Junction Temperature 8 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDT86246 Rev °C unless otherwise noted 5 μ 800 600 400 200 50 75 100 125 150 ...
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... THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 118 C/W θ 0.01 A 0.005 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDT86246 Rev °C unless otherwise noted J 500 100 V = 100 V DD 2.0 2.5 3 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 0.005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDT86246 Rev °C unless otherwise noted J SINGLE PULSE 118 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...