FDT86246 Fairchild Semiconductor, FDT86246 Datasheet - Page 5

• Manufacturer Part Number: FDT86246
• Description: MOSFET N-CH 150V 2A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDT86246

• Input Capacitance (ciss) @ Vds: 215pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 236 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 236 mOhms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 2 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDT86246 Rev.C
©2010 Fairchild Semiconductor Corporation
Typical Characteristics
0.005
0.01
0.1
2
1
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
SINGLE PULSE
R
= 25 °C unless otherwise noted
θ
JA
= 118
10
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
100
/t
x R
2
θJA
t
1
+ T
t
2
A
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