FDD5N50NZTM Fairchild Semiconductor, FDD5N50NZTM Datasheet - Page 3

• Manufacturer Part Number: FDD5N50NZTM
• Description: MOSFET N-CH 500V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDD5N50NZTM

• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 62W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD5N50NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
600
500
400
300
200
100
0.1
10
4
3
2
1
0
1
0.1
0.1
0
V
C
C
C
GS
oss
iss
rss
=
Drain Current and Gate Voltage
15.0 V
10.0 V
V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
2
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
4
1
1
V
GS
*Notes:
= 10V
1. 250
2. T
6
*Notes: T
C
V
= 25
GS
µ
(
C ds = shorted
s Pulse Test
*Notes:
= 20V
o
1. V
2. f = 1MHz
C
10
8
C
GS
= 25
10
= 0V
o
C
)
10
30
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
10
0.1
Figure 6. Gate Charge Characteristics
20
10
20
10
8
6
4
2
0
1
1
0.4
0
2
*Notes:
1. V
2. 250
V
DS
SD
0.6
2
µ
, Body Diode Forward Voltage [V]
Variation vs. Source Current
= 20V
and Temperature
s Pulse Test
Q
V
150
GS
g
, Total Gate Charge [nC]
V
V
V
, Gate-Source Voltage[V]
o
DS
DS
DS
C
4
= 100V
= 250V
= 400V
0.8
4
150
25
o
C
o
C
1.0
6
-55
*Notes:
1. V
2. 250
*Notes: I
o
6
C
GS
25
µ
= 0V
s Pulse Test
o
C
1.2
D
8
= 4A
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10
1.4
8