FDT86102LZ Fairchild Semiconductor, FDT86102LZ Datasheet

MOSFET N-CH 100V 6.6A SOT-223

FDT86102LZ

Manufacturer Part Number
FDT86102LZ
Description
MOSFET N-CH 100V 6.6A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDT86102LZ

Input Capacitance (ciss) @ Vds
1490pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
28 mOhms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
6.6 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDT86102LZ
Quantity:
4 000
FDT86102LZ Rev. C
©2010 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDT86102LZ
N-Channel PowerTrench
100 V, 6.6 A, 28 mΩ
Features
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
86102LZ
= 28 mΩ at V
= 38 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
SOT-223
D
GS
GS
= 10 V, I
= 4.5 V, I
FDT86102LZ
-Pulsed
Device
D
D
G
= 6.6 A
= 5.5 A
T
D
®
A
= 25 °C unless otherwise noted
MOSFET
S
Parameter
Package
SOT-223
T
T
A
A
1
= 25 °C
= 25 °C
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
Reel Size
13 ’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
(Note 3)
Tape Width
12 mm
-55 to +150
Ratings
100
±20
6.6
2.2
1.0
12
55
40
84
®
process that has
November 2010
www.fairchildsemi.com
2500 units
Quantity
Units
°C/W
mJ
°C
W
V
V
A

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FDT86102LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86102LZ FDT86102LZ ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C ® MOSFET General Description = 6.6 A This N-Channel MOSFET is produced using Fairchild D Semiconductor’s advanced PowerTrench = 5.5 A been especially tailored to minimize the on-state resistance and D switching loss ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 Starting ° mH The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On-Resistance vs Junction Temperature 40 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev °C unless otherwise noted 2 μ 150 120 100 125 150 0 ...

Page 4

... TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability - 125 GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev °C unless otherwise noted J 2000 1000 100 100 125 100 0.1 0.01 0.005 20 25 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 14. ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 118 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDT86102LZ Rev. C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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