FDB8160_F085 Fairchild Semiconductor, FDB8160_F085 Datasheet - Page 4

• Manufacturer Part Number: FDB8160_F085
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8160_F085

• Input Capacitance (ciss) @ Vds: 11825pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Mounting Style: SMD/SMT
• Fall Time: 27 ns
• Gate Charge Qg: 187 nC
• Rise Time: 18.9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB8160_F085 Rev. C
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
10000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
0.01
10
0.1
0
2
1
10
10
-5
-5
SINGLE PULSE
V
D = 0.50
25
DUTY CYCLE - DESCENDING ORDER
GS
0.20
0.10
0.05
0.02
0.01
= 10V
T
SINGLE PULSE
C
, CASE TEMPERATURE
50
Temperature
Figure 3.
10
75
10
-4
-4
100
Normalized Maximum Transient Thermal Impedance
125
Figure 4. Peak Current Capability
(
o
C
)
10
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
150
-3
-3
175
4
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
350
300
250
200
150
100
50
0
25
50
T
Case Temperature
10
10
C
, CASE TEMPERATURE
-1
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
75
CURRENT LIMITED
BY PACKAGE
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
100
DM
= 25
2
x Z
o
C
θJA
10
P
10
o
DM
1
C DERATE PEAK
125
/t
0
x R
0
2
175 - T
150
www.fairchildsemi.com
θJA
(
o
C
t
1
+ T
)
C
V
t
150
2
GS
C
= 10V
175
10
10
1
1