FDB8160_F085 Fairchild Semiconductor, FDB8160_F085 Datasheet - Page 5

• Manufacturer Part Number: FDB8160_F085
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8160_F085

• Input Capacitance (ciss) @ Vds: 11825pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 243nC @ 10V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Mounting Style: SMD/SMT
• Fall Time: 27 ns
• Gate Charge Qg: 187 nC
• Rise Time: 18.9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB8160_F085 Rev. C
Typical Characteristics
Figure 5.
3000
1000
100
160
120
Figure 9.
0.1
10
80
40
1
0
8
6
4
2
0
Variation vs Gate to Source Voltage
1
0
Figure 7.
4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(on)
V
DD
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
V
V
Forward Bias Safe Operating Area
= 5V
V
DS
1
GS
GS
Drain to Source On-Resistance
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE
, GATE TO SOURCE VOLTAGE (V)
T
J
Transfer Characteristics
= 25
2
I
D
o
6
=
C
T
80A
J
= 175
3
μ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
10
o
T
C
J
T
= 175
4
J
= 25
o
8
C
o
T
C
J
5
= -55
1ms
10ms
100ms
100us
(
o
V
C
6
)
μ
s
DC
90
7
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
1000
Figure 10.
100
Figure 6. Unclamped Inductive Switching
10
160
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
1
80
40
Resistance vs Junction Temperature
0
Figure 8.
0.0
-80
If R = 0
t
If R ≠ 0
t
AV
AV
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= (L)(I
STARTING T
= (L/R)ln[(I
V
0.1
-40
DS
AS
T
Normalized Drain to Source On
, DRAIN TO SOURCE VOLTAGE (V)
J
)/(1.3*RATED BV
, JUNCTION TEMPERATURE
t
Saturation Characteristics
AV
AS
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
J
Capability
1
= 150
0.5
o
40
C
μ
10
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DSS
s
STARTING T
- V
80
DD
DSS
100
)
1.0
- V
120
www.fairchildsemi.com
DD
V
) +1]
V
V
V
V
V
V
J
(
V
GS
GS
GS
GS
GS
GS
GS
o
I
= 25
1000 5000
D
C
GS
160
= 80A
= 20V
)
= 10V
= 7V
= 6V
= 5V
= 4.5V
= 4V
= 10V
o
C
μ
s
200
1.5