BUK6217-55C,118 NXP Semiconductors, BUK6217-55C,118 Datasheet

MOSFET N-CH TRENCH DPAK

BUK6217-55C,118

Manufacturer Part Number
BUK6217-55C,118
Description
MOSFET N-CH TRENCH DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK6217-55C118.pdf (14 pages)

Specifications of BUK6217-55C,118

Input Capacitance (ciss) @ Vds
1950pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
33.8nC @ 10V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
44 A
Power Dissipation
80 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
BUK6217-55C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 4 October 2010
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
gate-drain charge
Conditions
T
V
see
T
V
T
I
R
T
I
V
see
D
D
j
mb
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 44 A; V
= 25 A; V
Figure 1
Figure 14
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
sup
DS
j
D
≤ 175 °C
mb
GS
= 12 A;
= 44 V;
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
≤ 55 V;
Figure 11
= 25 °C;
Figure
= 10 V;
Figure 2
13;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
16
-
11.2
Max Unit
55
44
80
19
45
-
V
A
W
mΩ
mJ
nC

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BUK6217-55C,118 Summary of contents

Page 1

... BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... N-channel TrenchMOS intermediate level FET Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C Graphic symbol mbb076 Version SOT428 © NXP B.V. 2010. All rights reserved ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C Min Max - 55 [1] -16 16 [2] -20 20 Figure Figure 175 - 80 -55 175 -55 175 - 44 - 175 = 50 Ω ...

Page 4

... Product data sheet 003aae797 150 200 T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C N-channel TrenchMOS intermediate level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature = 10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6217-55C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C Min Typ Max - - 1.87 003aae795 t P δ ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C Min Typ Max = 25 ° -55 ° 1.8 2.3 2 3.3 0.8 ...

Page 7

... DS 003aae799 V ( 6.0 5.0 4.5 4.0 3.8 3.6 3.4 1.5 2 2.5 V (V) DS Fig 6. 003aae805 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C N-channel TrenchMOS intermediate level FET Min Typ = 25 ° 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aae803 V (V) = 5.0 GS 6.0 8 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C N-channel TrenchMOS intermediate level FET 4 GS(th) (V) 3 max typ 2 min junction temperature 2 ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aae802 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C N-channel TrenchMOS intermediate level FET (V) 7.5 14V 5 2 charge; typical values 60 I ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C N-channel TrenchMOS intermediate level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6217-5 v.2 20101004 • Modifications: Status changed from objective to product. • Various changes to content. BUK6217-55C v.1 20100921 BUK6217-55C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6217-55C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6217-55C ...

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