BUK6212-40C,118 NXP Semiconductors, BUK6212-40C,118 Datasheet

BUK6212-40C,118

Manufacturer Part Number

BUK6212-40C,118

Description

MOSFET N-CH TRENCH DPAK

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK6212-40C118.pdf (14 pages)

Specifications of BUK6212-40C,118

Input Capacitance (ciss) @ Vds

1900pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

11.2 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

50A

Vgs(th) (max) @ Id

2.8V @ 1mA

Gate Charge (qg) @ Vgs

33.9nC @ 10V

Power - Max

80W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

12 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Power Dissipation

80 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free by exemption / RoHS compliant by exemption

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using TrenchMOS technology. This product has been designed and

qualified to the appropriate AEC standard for use in automotive critical applications.

Table 1.

Symbol

Static characteristics



tot

DSon

BUK6212-40C

N-channel TrenchMOS intermediate level FET

Rev. 2 — 21 September 2010

AEC Q101 compliant

Suitable for standard and logic level

gate drive sources

12 V Automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoids

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

Conditions

see

≥ 25 °C; T

Figure 1

Figure 2

= 25 °C; see

= 10 V; T

= 10 V; I

≤ 175 °C

= 12 A;

= 25 °C;

Figure 11



Suitable for thermally demanding

environments due to 175 °C rating

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

[1]

Min

Product data sheet

Typ

9.5

Max Unit

11.2

mΩ

Related parts for BUK6212-40C,118

BUK6212-40C,118 Summary of contents

Page 1

... BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 — 21 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = 25 °C; j(init Figure 13; ...

Page 3

... Figure 3 see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C Min Max - 40 [1] -20 20 [2] -16 16 [3] Figure Figure 233 - 80 -55 175 -55 175 ...

Page 4

... Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C 0 50 100 150 T 003a a e 457 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6212-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C Min Typ Max - - 1.87 003aae458 t P δ ...

Page 6

... Figure 1.2 Ω Ω R G(ext) measured from source lead to source bond pad ° °C; measured from drain to j centre of die; All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... V (V) DS Fig 6. 003aae460 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C N-channel TrenchMOS intermediate level FET Min - = ( Forward transconductance as a function of drain current; typical values 40 R DSon (mΩ) ...

Page 8

... Fig 10. Sub-threshold drain current as a function of 003aae462 2.5 4 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C min typ max gate-source voltage - 120 factor as a function of junction temperature © NXP B.V. 2010. All rights reserved. ...

Page 9

... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae467 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C N-channel TrenchMOS intermediate level FET ( charge; typical values 80 ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6212-40C v.2 20100921 • Modifications: Status changed from Objective to Product. • Various changes to content. BUK6212-40C v.1 20100512 BUK6212-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...

Page 12

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 September 2010 BUK6212-40C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 September 2010 Document identifier: BUK6212-40C ...

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