BUK6211-75C,118 NXP Semiconductors, BUK6211-75C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK6211-75C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6211-75C,118

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 74 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6211-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
120
100
fs
D
125
100
80
60
40
20
75
50
25
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
T
Output characteristics: drain current as a
0
0
j
Characteristics
= 25°C; t
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
10
5
6
1
p
= 300 μs
40
4.5
…continued
2
60
V
GS
3
80
All information provided in this document is subject to legal disclaimers.
(V) = 4
V
003aae411
003aae885
DS
I
D
(A)
(V)
3.8
3.6
3.4
3.3
3.2
Rev. 02 — 28 September 2010
Conditions
I
see
I
V
S
S
100
GS
= 25 A; V
= 20 A; dI
4
Figure 15
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 25 V
R
(A)
(m Ω )
I
DSon
D
120
100
80
60
40
20
40
30
20
10
j
0
0
= 25 °C;
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
0
j
= 25°C; I
1
2
D
= 25 A
4
2
T
j
BUK6211-75C
Min
-
-
-
= 175 °C
N-channel TrenchMOS FET
3
6
Typ
0.8
50.5
105
T
© NXP B.V. 2010. All rights reserved.
j
8
4
= 25 °C
003aae410
003aae886
V
V
GS
GS
Max
1.2
-
-
(V)
(V)
10
5
Unit
V
ns
nC
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