PSMN6R5-80PS,127 NXP Semiconductors, PSMN6R5-80PS,127 Datasheet

PSMN6R5-80PS,127

Manufacturer Part Number

PSMN6R5-80PS,127

Description

MOSFET N-CH 80V SOT78

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN6R5-80PS127.pdf (15 pages)

Specifications of PSMN6R5-80PS,127

Input Capacitance (ciss) @ Vds

4461pF @ 40V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

6.9 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

80V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

71nC @ 10V

Power - Max

210W

Mounting Type

Through Hole

Package / Case

TO-220-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.9 mOhms

Drain-source Breakdown Voltage

80 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A, 470 A

Power Dissipation

210 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

Table 1.

[1]

[2]

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

PSMN6R5-80PS

N-channel 80 V 6.9 mΩ standard level MOSFET in TO220

Rev. 02 — 1 November 2010

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Continuous current rating is limited by package.

Measured 3 mm from package.

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive drain-source

avalanche energy

Quick reference data

Conditions

see

≥ 25 °C; T

= 25 °C; see

= 49 A; V

= 25 °C; V

Figure 1

= 25 °C; see

Figure 15

= 40 V; see

= 10 V; I

= 10 V; T

= 50 Ω; unclamped

sup

≤ 175 °C

j(init)

Suitable for standard level gate drive

sources

Motor control

Server power supplies

= 15 A;

= 25 A;

≤ 80 V;

Figure 13

Figure

Figure 2

= 10 V;

= 25 °C;

14;

[1]

[2]

Min

-55

Product data sheet

Typ

5.9

Max Unit

100

210

175

6.9

700

°C

mΩ

Related parts for PSMN6R5-80PS,127

PSMN6R5-80PS,127 Summary of contents

Page 1

... PSMN6R5-80PS N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... V sup GS 003aad362 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min - = 20 kΩ -20 Figure 1 - [1] Figure °C; see Figure -55 - ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN6R5-80PS Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS 003aad386 10 μs 100 μ 100 ms 2 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R5-80PS Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min Typ Max - 0.4 0.7 003aad247 t p δ ...

Page 6

... Figure 14; see Figure see MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext ° see Figure 17 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min Typ Max = -55 ° ° 4 150 = 25 ° 100 - 10 100 - - 11.5 ...

Page 7

... V (V) = 4 (V) DS Fig 6. 003aad446 C iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min Typ - 100 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 150 ...

Page 8

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS 03aa35 min typ max (V) GS 003aad045 - 120 150 ...

Page 9

... N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 003aad441 ( 5 100 I (A) D Fig 14. Gate charge waveform definitions 003aad444 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS GS(pl) V GS(th GS1 GS2 G(tot (pF ...

Page 10

... Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 100 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS 003aad443 = 25 °C j 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN6R5-80PS v.2 20101101 • Modifications: Status changed from objective to product. • Various changes to content. PSMN6R5-80PS v.1 20100309 PSMN6R5-80PS Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Data sheet status ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 November 2010 Document identifier: PSMN6R5-80PS ...

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