PH1330AL,115 NXP Semiconductors, PH1330AL,115 Datasheet - Page 8

• Manufacturer Part Number: PH1330AL,115
• Description: MOSFET N-CH 30V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH1330AL,115

• Input Capacitance (ciss) @ Vds: 6227pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Power - Max: 121W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PH1330AL_1
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Gate charge waveform definitions
10
10
10
10
10
10
(A)
I
D
-1
-2
-3
-4
-5
-6
gate-source voltage
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
min
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
typ
2
V
GS
003aab271
003aaa508
max
(V)
Rev. 01 — 14 October 2009
3
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
25
0
60
50
PH1330AL
V
120
75
DS
© NXP B.V. 2009. All rights reserved.
= 12V
003aad150
Q
T
G
j
( ° C)
03aa27
(nC)
100
180
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