BUK664R8-75C,118 NXP Semiconductors, BUK664R8-75C,118 Datasheet - Page 11
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BUK664R8-75C,118
Manufacturer Part Number
BUK664R8-75C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK664R8-75C118.pdf
(14 pages)
Specifications of BUK664R8-75C,118
Input Capacitance (ciss) @ Vds
177nC @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
177nC @ 10V
Power - Max
263W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
8. Revision history
Table 7.
BUK664R8-75C
Product data sheet
Document ID
BUK664R8-75C v.2
Modifications:
BUK664R8-75C v.1
Revision history
20100706
Release date
20101117
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 November 2010
Data sheet status
Product data sheet
Objective data sheet
Change notice
-
-
BUK664R8-75C
N-channel TrenchMOS FET
Supersedes
BUK664R8-75C v.1
-
© NXP B.V. 2010. All rights reserved.
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